Qorvo QPA2210D

QPA2210D RF Amplifier by Qorvo

QPA2210D RF Amplifier by Qorvo

The QPA2210D from Qorvo is a Ka-band power amplifier that operates from 27 to 31 GHz. It provides a saturated output power of 7 W with a power-added efficiency of 32%. This PA achieves 2.5 W of linear power with -25 dBc intermodulation distortion products and 25 dB of small signal gain. It is fabricated on Qorvo’s 0.15 um GaN on SiC process (QGaN15). This PA is available as a die that measures 2.74 x 1.432 x 0.050 mm and is ideally suited to support satellite communications and 5G infrastructure.

The QPA2210D is fully matched to 50 ohms with integrated DC blocking caps on both I/O ports. It is 100% DC and RF tested on-wafer to ensure compliance to electrical specifications.

Product Details

    • Part Number : QPA2210D
    • Manufacturer : Qorvo
    • Description : 7 W GaN Power Amplifier from 27 to 31 GHz

General Parameters

    • Type : Power Amplifier
    • Configuration : Die
    • Standards Supported : 5G
    • Industry Application : SATCOM, Wireless Infrastructure
    • Frequency : 27 to 31 GHz
    • Gain : 16 to 25 dB
    • Power Gain : 16 dB
    • Small Signal Gain : 25 dB
    • Output Power : 38.8 to 39 dBm
    • Output Power : 7.58 to 7.94 W
    • Grade : Commercial, Military, Space
    • Saturated Power : 38.4 dBm
    • Saturated Power : 6.91 W
    • Input Power : 21 dBm
    • Input Power : 0.12 W
    • PAE : 32%
    • Impedance : 50 Ohms
    • Pulsed/CW : CW
    • Sub-Category : GaN Amplifier, Linear Amplifier
    • Return Loss : 7 to 20 dB
    • Input Return Loss : 11 to 20 dB
    • Output Return Loss : 7 to 9 dB
    • Transistor Technology : GaN on SiC
    • Dimensions : 2.740 x 1.432 x 0.050 mm
    • Operating Temperature : -40 to 85 Degree C
    • Storage Temperature : -55 to 150 Degree C
    • RoHS : Yes

Courtesy of everything RF

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