QPA2210D RF Amplifier by Qorvo
The QPA2210D from Qorvo is a Ka-band power amplifier that operates from 27 to 31 GHz. It provides a saturated output power of 7 W with a power-added efficiency of 32%. This PA achieves 2.5 W of linear power with -25 dBc intermodulation distortion products and 25 dB of small signal gain. It is fabricated on Qorvo’s 0.15 um GaN on SiC process (QGaN15). This PA is available as a die that measures 2.74 x 1.432 x 0.050 mm and is ideally suited to support satellite communications and 5G infrastructure.
The QPA2210D is fully matched to 50 ohms with integrated DC blocking caps on both I/O ports. It is 100% DC and RF tested on-wafer to ensure compliance to electrical specifications.
Product Details
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- Part Number : QPA2210D
- Manufacturer : Qorvo
- Description : 7 W GaN Power Amplifier from 27 to 31 GHz
General Parameters
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- Type : Power Amplifier
- Configuration : Die
- Standards Supported : 5G
- Industry Application : SATCOM, Wireless Infrastructure
- Frequency : 27 to 31 GHz
- Gain : 16 to 25 dB
- Power Gain : 16 dB
- Small Signal Gain : 25 dB
- Output Power : 38.8 to 39 dBm
- Output Power : 7.58 to 7.94 W
- Grade : Commercial, Military, Space
- Saturated Power : 38.4 dBm
- Saturated Power : 6.91 W
- Input Power : 21 dBm
- Input Power : 0.12 W
- PAE : 32%
- Impedance : 50 Ohms
- Pulsed/CW : CW
- Sub-Category : GaN Amplifier, Linear Amplifier
- Return Loss : 7 to 20 dB
- Input Return Loss : 11 to 20 dB
- Output Return Loss : 7 to 9 dB
- Transistor Technology : GaN on SiC
- Dimensions : 2.740 x 1.432 x 0.050 mm
- Operating Temperature : -40 to 85 Degree C
- Storage Temperature : -55 to 150 Degree C
- RoHS : Yes
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