QPM1021 RF Amplifier by Qorvo

The QPM1021 from Qorvo is a High Power GaN Amplifier that operates from 10 to 12 GHz. It delivers 100 W of saturated output power with a gain of over 20 dB, and PAE of more than 32%. This amplifier is fabricated using Qorvo’s 0.15 um GaN on SiC process and is available in a 10-lead 19.05 x 19.05 x 4.52 mm bolt-down package, with a pure copper base for superior thermal management. It is an ideal solution for both commercial & military radar systems, satellite communication systems, and data links.

Product Details

• • Part Number : QPM1021
  • Manufacturer : Qorvo
  • Description : 100 W GaN Power Amplifier from 10 to 12 GHz

General Parameters

• • Type : Power Amplifier
  • Configuration : IC/MMIC/SMT
  • Industry Application : Commercial, Radar, Military
  • Frequency : 10 to 12 GHz
  • Power Gain : 20 dB
  • Small Signal Gain : 26 dB
  • Saturated Power : 50 dBm
  • Saturated Power : 100 W
  • Input Power : 28 dBm
  • Input Power : 0.63 W
  • PAE : 26.2 to 32.9%
  • Impedance : 50 Ohms
  • Pulsed/CW : Pulsed
  • Sub-Category : GaN Amplifier
  • Input Return Loss : 13 dB
  • Output Return Loss : 11 dB
  • Supply Voltage : 24 to 28 V
  • Transistor Technology : GaN on SiC
  • Package Type : Bolt Down
  • Package : 10-Lead Bolt-Down
  • Dimensions : 19.05 x 19.05 x 4.52 mm
  • Operating Temperature : -40 to 85 Degree C
  • Storage Temperature : -55 to 150 Degree C
  • RoHS : Yes

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