QPM1021 RF Amplifier by Qorvo
The QPM1021 from Qorvo is a High Power GaN Amplifier that operates from 10 to 12 GHz. It delivers 100 W of saturated output power with a gain of over 20 dB, and PAE of more than 32%. This amplifier is fabricated using Qorvo’s 0.15 um GaN on SiC process and is available in a 10-lead 19.05 x 19.05 x 4.52 mm bolt-down package, with a pure copper base for superior thermal management. It is an ideal solution for both commercial & military radar systems, satellite communication systems, and data links.
Product Details
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- Part Number : QPM1021
- Manufacturer : Qorvo
- Description : 100 W GaN Power Amplifier from 10 to 12 GHz
General Parameters
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- Type : Power Amplifier
- Configuration : IC/MMIC/SMT
- Industry Application : Commercial, Radar, Military
- Frequency : 10 to 12 GHz
- Power Gain : 20 dB
- Small Signal Gain : 26 dB
- Saturated Power : 50 dBm
- Saturated Power : 100 W
- Input Power : 28 dBm
- Input Power : 0.63 W
- PAE : 26.2 to 32.9%
- Impedance : 50 Ohms
- Pulsed/CW : Pulsed
- Sub-Category : GaN Amplifier
- Input Return Loss : 13 dB
- Output Return Loss : 11 dB
- Supply Voltage : 24 to 28 V
- Transistor Technology : GaN on SiC
- Package Type : Bolt Down
- Package : 10-Lead Bolt-Down
- Dimensions : 19.05 x 19.05 x 4.52 mm
- Operating Temperature : -40 to 85 Degree C
- Storage Temperature : -55 to 150 Degree C
- RoHS : Yes
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