QPD0405 RF Transistor by Qorvo
The QPD0405 from Qorvo is a Dual Path GaN RF Transistor that operates from 4.4 to 5 GHz. It provides a saturated output power of 22 watts (43.4 dBm) with a linear gain of 15.4 dB and has an efficiency of up to 75%. This transistor requires a DC voltage of 48 V and consumes 32.5 mA of current. It is manufactured using a GaN HEMT process and is available in a DFN package that measures 7 x 6.5 mm.
Product Details
- Part Number: QPD0405
- Manufacturer: Qorvo
- Description: Dual Path GaN RF Transistor from 4.4 to 5 GHz
General Parameters
- Transistor Type: HEMT
- Technology: GaN on SiC
- Application Industry: Cellular, Wireless Infrastructure
- Application: W-CDMA / LTE, Macrocell Base Station Driver, Microcell Base Station, Small Cell, Active Antenna, 5G Massive MIMO
- Frequency: 4.4 to 5 GHz
- Power: 43.42 dBm (Psat)
- Power(W): 22 W (Psat)
- Gain: 15.4 dB
- Supply Voltage: 48 V
- Current: 32.5 mA
- Drain Efficiency: 75 %
- Lead Free: Yes
- Package Type: Surface Mount
- Package: DFN
- Dimension: 7.0 x 6.5 mm
- RoHS: Yes
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