QPD0405 RF Transistor by Qorvo

QPD0405 RF Transistor by Qorvo

QPD0405 RF Transistor by Qorvo

The QPD0405 from Qorvo is a Dual Path GaN RF Transistor that operates from 4.4 to 5 GHz. It provides a saturated output power of 22 watts (43.4 dBm) with a linear gain of 15.4 dB and has an efficiency of up to 75%. This transistor requires a DC voltage of 48 V and consumes 32.5 mA of current. It is manufactured using a GaN HEMT process and is available in a DFN package that measures 7 x 6.5 mm.

Product Details

  • Part Number: QPD0405
  • Manufacturer: Qorvo
  • Description: Dual Path GaN RF Transistor from 4.4 to 5 GHz

General Parameters

  • Transistor Type: HEMT
  • Technology: GaN on SiC
  • Application Industry: Cellular, Wireless Infrastructure
  • Application: W-CDMA / LTE, Macrocell Base Station Driver, Microcell Base Station, Small Cell, Active Antenna, 5G Massive MIMO
  • Frequency: 4.4 to 5 GHz
  • Power: 43.42 dBm (Psat)
  • Power(W): 22 W (Psat)
  • Gain: 15.4 dB
  • Supply Voltage: 48 V
  • Current: 32.5 mA
  • Drain Efficiency: 75 %
  • Lead Free: Yes
  • Package Type: Surface Mount
  • Package: DFN
  • Dimension: 7.0 x 6.5 mm
  • RoHS: Yes

Courtesy of everything RF

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