QPD0005M RF Transistor by Qorvo

The QPD0005M from Qorvo is a GaN on SiC Transistor that operates from 2.5 to 5 GHz. It delivers a saturated output power of 37.7 dBm (~6 W) with a gain of 18.6 dB and has a drain efficiency of 74.1%. The transistor requires a DC supply of 48 V and draws 20 mA of current. It is available in a RoHS compliant, plastic overmold DFN package that measures 4.5 x 4.0 mm and is suitable for WCDMA / LTE, macrocell base stations, microcell base stations, small cells, active antennas, 5G massive MIMO, and general-purpose applications.

Product Details

• Part Number: QPD0005M
• Manufacturer: Qorvo
• Description: 6 W GaN Transistor from 2.5 to 5 GHz

General Parameters

• Transistor Type: HEMT
• Technology: GaN, GaN on SiC
• Application Industry: Base Station
• Application: 5G Massive MIMO, Active Antenna, General Purpose, Macrocell Base Station Driver, Microcell Base Station, Small Cell, WCDMA
• Frequency: 2500 to 5000 MHz
• Power: 37.78 dBm
• Power(W): 6 W
• Saturated Power: 37.7 W
• Gain: 18.6 dB
• Supply Voltage: 48 V
• Drain Efficiency: 74.1 %
• Quiescent Drain Current: 20 mA
• Package: DFN
• Dimension: 4.5 x 4.0 mm
• RoHS: Yes

Courtesy of everything RF