APM-7516 RF Amplifier by Marki Microwave

APM-7516 RF Amplifier by Marki Microwave

APM-7516 RF Amplifier by Marki Microwave

The APM-7516 from Marki Microwave is a low-phase noise amplifier that operates from 1 to 22 GHz. This amplifier provides a saturated output power of 23 dBm and a small signal gain of 12.5 dB with a noise figure of 5.1 dB. It can handle up to 20 dBm of input power and has a phase noise of -165 dBc/Hz at 10 kHz offset from the carrier frequency.

This amplifier uses GaAs HBT technology to provide low phase noise performance and is optimized to provide enough power to drive the LO port of an S-diode mixer from 1 GHz to 18 GHz or of an H or L diode mixer from 1 GHz to 22 GHz.

The APM-7516 is available in a connectorized module that measures 1.12 x 0.59 x 0.41 inches with 2.92 mm connectors. It can be operated with a variety of bias conditions for both low power and high-power applications such as mobile test and measurement equipment, radar and satellite communication, 5G transceivers, and driver amplifier for S, H, and L-diode mixers.

Product Details

  • Part Number: APM-7516
  • Manufacturer: Marki Microwave
  • Description: Low Phase Noise Driver Amplifier from 1 to 22 GHz

General Parameters

  • Type: Driver Amplifier, Power Amplifier
  • Configuration: Module with Connector
  • Application: Mobile Infrastructure
  • Standards Supported: 5G
  • Industry Application: Radar, SATCOM, Test & Measurement
  • Frequency: 1 to 22 GHz
  • Small Signal Gain: 12.5 dB
  • Noise Figure: 5.1 dB
  • Output Power: 20 dBm
  • Output Power: 0.1 W
  • P1dB: 18 dBm
  • P1dB: 0.063 W
  • IP3: 33 dBm (OIP3) & 21 dBm (IIP3)
  • IP3: 2 W
  • Saturated Power: 23 dBm
  • Saturated Power: 0.1995 W
  • Input Power: 20 dBm
  • Input Power: 0.1 W
  • Power Dissipation: 1.2 W
  • Impedance: 50 Ohms
  • Reverse Isolation: 34 dB
  • Output VSWR: 7.0:1
  • Input Return Loss: 18 dB
  • Output Return Loss: 20 dB
  • Phase Noise: -164 dBc/Hz
  • Supply Voltage: 5 V
  • Current Consumption: 106 mA
  • Transistor Technology: GaAs HBT
  • Technology: GaAs
  • Dimensions: 1.12 x 0.59 x 0.41 in.
  • Connectors: 2.92 mm
  • Input Connector: 2.92 mm – Female
  • Output Connector: 2.92 mm – Male
  • Operating Temperature: -40 to 85 Degree C
  • Storage Temperature: -65 to 150 Degree C
  • RoHS: Yes

Courtesy of everything RF

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