SGN2425-300P RF Transistor by Sumitomo Electric Device Innovations
The SGN2425-300P from Sumitomo Electric is a GaN HEMT Transistor that operates from 2.4 to 2.5 GHz. It delivers CW peak power of 300 W with a power gain of 50 dB and a drain efficiency of 74%. This transistor has a power density of 10 to 20 W/mm in CW/pulsed modes and enables phase-coherent power delivery, allowing beamforming, power steering, and uniform heating in microwave cavities. It requires a DC supply of 50 V and is available in a compact package. This GaN transistor is ideal for use in industrial ovens, medical equipment, plasma generation, and RF energy applications.
Product Details
- Part Number: SGN2425-300P
- Manufacturer: Sumitomo Electric Device Innovations
- Description: 300 W GaN HEMT Transistor from 2.4 to 2.5 GHz
General Parameters
- Transistor Type: HEMT
- Technology: GaN
- Application Industry: ISM
- Application: RF Energy, Microwave Heating
- CW/Pulse: CW
- Frequency: 2.4 to 2.5 GHz
- Power: 54.77 dBm
- Power(W): 300 W
- Power Gain (Gp): 300 W
- Supply Voltage: 50 V
- Drain Efficiency: 74 %
- Package Type: Surface Mount
Courtesy of everythingRF
