SGCB056M1H-R by Sumitomo Electric Device Innovations

SGCB056M1H-R by Sumitomo Electric Device Innovations

SGCB056M1H-R by Sumitomo Electric Device Innovations

SGCB056M1H-R Dimension

Product Specifications

Part Number SGCB056M1H-R
Class GaN Product > GaN HEMTs for Radar
Outline / Package Code M1H
Function DC – 3.5GHz High Power GaN-HEMT
Features
  • High Power GaN HEMT for DC to 3.5GHz
  • High Power: 67W @ 3.5GHz
  • High Efficiency: 60% @ 3.5GHz
  • Broadband Operation
  • Small Flangeless Package
Description Sumitomo Electric’s GaN-HEMT SGCB056M1H-R offers high power, high efficiency, ease of matching and greater consistency for DC to 3.5GHz Radar applications with 50V operation. SGCB056M1H-R is suitable for broadband applications.
Datasheet
PDF 1652KB

Electrical Characteristics

Frequency (GHz) DC-3.5
Pout (dBm) 48.3
Power Gain (dB) 12.3
Efficiency (%) 60
VDS (V) 50
IDS(DC) (A) 0.13
Rth (°C/W) 2.2
Condition Pulse width: 200µsec, Duty 10%
Note Tc(op)=+25°C

Courtesy of Sumitomo Electric Device Innovations

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