H9G0810M06P RF Amplifier by Watech Electronics

The H9G0810M06P from Watech Electronics is an Asymmetrical Single-stage Doherty Amplifier that operates from 869 to 960 MHz. It delivers a saturated output power of 37 dBm (5 W) with a gain of up to 19.689 dB and an efficiency of up to 48.53%. This LDMOS amplifier has an integrated power divider. It has an ACLR of -32 dBc and an input return loss of less than -9 dB. This Doherty amplifier requires a DC supply of +28 V.

The H9G0810M06P is available in an LGA package that measures 6 x 6 x 1.1 mm. It is ideal for 3GPP 5G NR FR1 n5/8/18/26 and 4G-LTE band B5/8/18/26, power amplifier for small cells, driver amplifier for micro & macro base stations, active antenna array for 5G mMIMO, and repeaters/DAS applications.

Product Details

• Part Number: H9G0810M06P
• Manufacturer: Watech Electronics
• Description: 5 W Asymmetrical Single-Stage Doherty Amplifier from 869 to 960 MHz

General Parameters

• Type: Power Amplifier, Driver Amplifier
• Configuration: IC/MMIC/SMT
• Application: Base Station, DAS, Small Cell, Boosters/Repeaters
• Standards Supported: 5G NR, 4G/LTE, 5G
• Industry Application: Cellular, Wireless Infrastructure
• Frequency: 869 to 960 MHz
• Gain: 19.29 to 19.69 dB
• Output Power: 36.99 dBm
• Output Power: 5 W
• Saturated Power: 36.99 dBm
• Saturated Power: 5 W
• PAE: 44.87 to 48.53%
• Impedance: 50 Ohms
• Pulsed/CW: CW/Pulsed
• Pulse Width: 100 uS
• Duty Cycle: 10%
• Sub-Category: Doherty Amplifier
• Return Loss: -26.47 to -17.80 dB
• Input Return Loss: -26.47 to -17.8 dB
• Supply Voltage: 28 V (Drain)
• Quiscent Current: 18 mA
• Technology: LDMOS
• Package Type: Surface Mount
• Package: 24 Lead LGA
• Dimensions: 6 x 6 mm
• Storage Temperature: -55 to 150 Degree C
• RoHS: Yes

Get in touch for orders or any queries: sales@rfdesign.co.za / +27 21 555 8400

Courtesy of Watech Electronics (WATECH)