QPA2511 RF Amplifier by Qorvo
The QPA2511 from Qorvo is a 2-Stage Power Amplifier Module that operates from 1.2 to 1.4 GHz. It delivers an output of 100 W with a large signal gain of 32 dB and a drain efficiency of 69 %. This PAM is manufactured using GaN-on-SiC HEMT technology that ensures optimal performance and high reliability. It requires a DC supply of 50 V and has a DC-blocking capacitor at the input port. The amplifier is available in a surface-mount package that measures 25.00 x 12.50 x 3.49 mm and is matched to 50 Ohms with integrated bias circuits. It is ideal for use in both military and commercial pulsed radar systems.
Product Details
- Part Number: QPA2511
- Manufacturer: Qorvo
- Description: 100 W GaN Power Amplifier Module from 1.2 to 1.4 GHz
General Parameters
- Type: Power Amplifier
- Configuration: IC/MMIC/SMT
- Industry Application: Military, Radar
- Frequency: 1.2 to 1.4 GHz
- Power Gain: 32.8 dB
- Small Signal Gain: 35.8 dB
- Grade: Commercial, Military
- Saturated Power: 50 to 51.6 dBm
- Saturated Power: 100 to 144.54 W
- Input Power: 25 dBm
- Input Power: 0.316 W
- Power Dissipation: 90.72 W
- PAE: 60 %
- Impedance: 50 Ohms
- Pulsed/CW: CW/Pulsed
- Pulse Width: 100 us
- Duty Cycle: 10%
- Sub-Category: GaN Amplifier
- Return Loss: 10 dB
- Supply Voltage: 50 V
- Quiscent Current: 10 to 100 mA
- Transistor Technology: GaN on SiC
- Technology: GaN
- Package Type: Surface Mount
- Dimensions: 25.0 x 12.5 x 3.488 mm
- Operating Temperature: -40 to 85 Degree C
- Storage Temperature: -65 to 150 Degree C
- RoHS: Yes
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