SGNL130M1R by Sumitomo Electric Device Innovations

SGNL130M1R by Sumitomo Electric Device Innovations

SGNL130M1H by Sumitomo Electric Device Innovations

Sumitomo Electric SGNL130M1R

Part Number SGNL130M1R
Class GaN Product > GaN HEMTs for General Purpose
Outline / Package Code
M1R
Function DC – 3GHz High Power GaN-HEMT
Features
  • High Power GaN HEMT for DC to 3GHz
  • High Power : 150W @ 3GHz
  • High Efficiency: 57% @ 3GHz
  • CW Operable
  • Easy of Matching: Input Pre-matched for 3GHz
  • Small Footprint Flange-mount Package
Description Sumitomo Electric’s GaN-HEMT SGNL130M1R offers high power, high efficiency, ease of matching and greater consistency for DC to 3GHz high power applications with 50V operation.
Datasheet (712KB PDF)
Frequency (GHz) DC-3.0
VDS (V) 50
Spec. Frequency 3
Pout (dBm) 51.9
Gp (dB) 15.9
ηD @Psat (%) 56.5
Conditions Pulse width: 200µsec, Duty 10%
Note Tc(op)=+25°C

Courtesy of Sumitomo Electric Device Innovations

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