SGNL130M1H by Sumitomo Electric Device Innovations

SGNL130M1H by Sumitomo Electric Device Innovations

SGNL130M1H package dimensions

Part Number SGNL130M1H
Class GaN Product > GaN HEMTs for General Purpose
Outline / Package Code
M1H
Function DC – 3GHz High Power GaN-HEMT
Features
Description Sumitomo Electric’s GaN-HEMT SGNL130M1H offers high power, high efficiency, ease of matching, and greater consistency for DC to 3GHz high power applications with 50V operation.
Datasheet (574KB)
Frequency (GHz) DC–3.0
VDS (V) 50
Spec. Frequency 3
Pout (dBm) 51.9
Gp (dB) 15.9
ηD @ Psat (%) 56.5
Conditions Pulse width: 200µs, Duty: 10%
Note Tc(op) = +25°C

Courtesy of Sumitomo Electric Device Innovations

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