Courtesy of Qorvo : Read full article here: Qorvo® Introduces Industry’s Most Powerful GaN-on-SiC Transistor
CRITICAL IFF AND AVIONICS APPLICATIONS GET BOOST IN SIGNAL INTEGRITY AND RANGE
GREENSBORO, NC – March 13, 2018 – Qorvo® (Nasdaq:QRVO), a leading provider of innovative RF solutions that connect the world, today introduced the world’s highest power gallium nitride on silicon carbide (GaN-on-SiC) RF transistor. Operating with 1.8KW at 65 volts, the QPD1025 delivers the outstanding signal integrity and extended reach essential for L-band avionics and Identification Friend or Foe (IFF) applications.
Asif Anwar, executive director of Strategy Analytics’ Strategic Technologies Practice, said, “Qorvo’s QPD1025 transistor represents a true game changer in this segment. It offers comparable pulsed power and duty cycle performance to silicon LDMOS and silicon bipolar devices, but with a marked improvement in efficiency. Qorvo further achieves this high power and efficiency without introducing exotic materials such as diamond into the process flow for thermal management, ensuring a solution that is cost effective.”
Roger Hall, general manager, Qorvo High Power Solutions, said, “This new high-power transistor will save customers time and money by eliminating the difficult exercise of combining amplifiers to create multi-kilowatt solutions. The QPD1025 has significantly better drain efficiency and beats LDMOS by nearly 15 percentage points of efficiency, which is significant in IFF and avionics applications.”
Qorvo offers the industry’s largest, most innovative GaN-on-SiC portfolio. The company’s products deliver high power density, reduced size, excellent gain, high reliability and process maturity, with volume production dating back to 2000. More information about the benefits of Qorvo’s GaN-on-SiC is available here, and in this video.
Engineering samples of the QPD1025 are available now.
|QPD1025 1800 Watt, 65-Volt GaN RF Input-Matched Transistor|
|Frequency Range: 1.0 to 1.1 GHz|
|Linear Gain: 22.5 dB (@1.0 GHz Load Pull)|
|Typical PAE3dB: 77.2% (@1.0 GHz Load Pull)|
|CW and Pulse capable|
|Package: 4-lead NI-1230 (earless)|
Qorvo (NASDAQ:QRVO) makes a better world possible by providing innovative RF solutions at the center of connectivity. We combine product and technology leadership, systems-level expertise and global manufacturing scale to quickly solve our customers’ most complex technical challenges. Qorvo serves diverse high-growth segments of large global markets, including advanced wireless devices, wired and wireless networks and defense radar and communications. We also leverage our unique competitive strengths to advance 5G networks, cloud computing, the Internet of Things, and other emerging applications that expand the global framework interconnecting people, places and things. Visit www.qorvo.com to learn how Qorvo connects the world.
Qorvo is a registered trademark of Qorvo, Inc. in the U.S. and in other countries.
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Marketing Communications Manager
Qorvo Infrastructure and Defense Products
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