QPD2018D RF Transistor by Qorvo
The QPD2018D from Qorvo is a Discrete 180-micron GaAs pHEMT transistor that operates from DC to 20 GHz. It provides a gain of 14 dB with a power-added efficiency of 55% and has a noise figure of 1 dB. This transistor is designed using Qorvo’s standard 0.25 um power pHEMT production process featuring advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions. It is available as a die that measures 0.41 x 0.34 x 0.10 mm with a silicon nitride protective overcoat that provides environmental robustness and scratch protection. The transistor is ideal for use in communications, radar, point-to-point radio, and satellite communications applications.
Product Details
- Part Number: QPD2018D
- Manufacturer: Qorvo
- Description: Discrete GaAs pHEMT Transistor Die from DC to 20 GHz
General Parameters
- Transistor Type: pHEMT
- Application Industry: Broadcast, Radar, SATCOM
- Frequency: DC to 20 GHz
- Power: 22 dBm (Psat)
- Power(W): 0.15 W (Psat)
- P1dB: 22 dBm
- Gain: 14 dB
- Noise Figure: 1 dB
- Supply Voltage: 8 V
- Current: 29 mA
- Lead Free: Yes
- Package Type: Surface Mount
- Package: Die
- Dimension: 0.41 x 0.34 x 0.10 mm
- RoHS: Yes
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