Qorvo QPD1025 : 1,800 Watt GaN-on-SiC Transistor For Critical IFF and Avionics Applications
Courtesy of everything RF – Read article here : Qorvo QPD1025 : 1,800 Watt GaN-on-SiC Transistor For Critical IFF and Avionics Applications Qorvo has introduced its highest power gallium nitride on silicon carbide (GaN-on-SiC) RF transistor that has an output power of 1.8 KW. The QPD1025 is a 65 volts GaN Transistor operates from 1.0 to 1.1 GHz and delivers outstanding…
