The Phenomenon of High-Power Pulse Recovery in GaN LNAs- Part One
Read the full article on Custom MMIC website here: The Phenomenon of High-Power Pulse Recovery in GaN LNAs- Part One INTRODUCTION The Gallium Nitride (GaN) high electron mobility transistor (HEMT) is well known for its use in microwave and millimeter-wave power amplifiers due to its high breakdown voltage and ability to handle high RF power. Recently, GaN…
