SGC0910-200B-R by Sumitomo Electric Device Innovations Part Number SGC0910-200B-R Class GaN Product > GaN HEMTs for Radar > C/X Outline / Package Code IK Function X-Band Internally Matched GaN-HEMT Features High Output Power: Psat = 53.5 dBm (Typ.) High Gain: Gp = 9.5 dB (Typ.) High Power Added Efficiency: PAE = 39% (Typ.) Broad Band:...

SGN2425-300P RF Transistor by Sumitomo Electric Device Innovations The SGN2425-300P from Sumitomo Electric is a GaN HEMT Transistor that operates from 2.4 to 2.5 GHz. It delivers CW peak power of 300 W with a power gain of 50 dB and a drain efficiency of 74%. This transistor has a power density of 10 to 20 W/mm...

Sumitomo Electric's GaN-HEMT SGNL005Z2K-R Get in touch for orders or any queries: sales@rfdesign.co.za / +27 21 555 8400 Courtesy of Sumitomo Electric